sot-223 plastic-encapsulate transistors CZT31C transistor (npn) features z complementary to czt32c z power amplifier applications up to 3.0 amps. maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 3 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -65 ~ 150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =1m a,i e =0 100 v collector-emitter breakdown voltage v (br)ceo i c =30ma,i b =0 100 v emitter-base breakdown voltage v (br)ebo i e =3ma,i c =0 5 v collector cut-off current i cbo v cb =100v,i e =0 200 ua base cut-off current i ceo v ce =60v,i b =0 300 ua emitter cut-off current i ebo v eb =5v,i c =0 1 ma h fe(1) * v ce =4v,i c =1a 25 dc current gain h fe(2) * v ce =4v,i c =3a 10 100 collector-emitter saturation voltage v ce(sat) * i c =3.0a,i b =375ma 1.2 v base-emitter voltage v be * v ce =4v,i c =3a 1.8 v transition frequency f t v ce =10v,i c =500ma,f=1mhz 3 mhz * pulsed , 2%d.c. sot-223 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
|
